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Conferences > FiO > 2012 > FTu4A > FTu4A.3

Optical Properties of Gallium Implanted Silicon

Michael J. Theisen and Thomas G. Brown

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Abstract

We present measurements of the optical constants n and k of gallium-implanted silicon (Si:Ga) in the spectral range 500 − 1000 nm using ellipsometry and reflectance to assess the usefulness of this material for nanophotonics.

© 2012 Optical Society of America

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