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Metal-Semiconductor-Metal Monolithic Silicon-Waveguide Photodiode Design and Analysis

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Abstract

We present a monolithic Si-nanowire-waveguide based Metal-Semiconductor-Metal photodetector design and compare to similar p-i-n structures. Key characteristics are simplicity of design, dark current of 1nA at 15V, and calculated frequency response of ≈14 GHz.

© 2013 Optical Society of America

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