We present a monolithic Si-nanowire-waveguide based Metal-Semiconductor-Metal photodetector design and compare to similar p-i-n structures. Key characteristics are simplicity of design, dark current of 1nA at 15V, and calculated frequency response of ≈14 GHz.
© 2013 OSA
B. Souhan, R. R. Grote, J. B. Driscoll, X. Meng, and R. M. Osgood, "Metal-Semiconductor-Metal Monolithic Silicon-Waveguide Photodiode Design and Analysis," in Frontiers in Optics 2013, I. Kang, D. Reitze, N. Alic, and D. Hagan, eds., OSA Technical Digest (online) (Optical Society of America, 2013), paper FM3E.3.
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