OSA's Digital Library

Optics InfoBase > Conference Papers > IONT > 2012 > ITh3B > Page ITh3B.4 © 2012 OSA

Conference Paper
Information Optoelectronics, Nanofabrication and Testing
Wuhan China
November 1-2, 2012
ISBN: 978-1-55752-960-2
Silicon Photonics I (ITh3B)

Combination of Ge Self-Assembled Quantum Dots and Photonic Crystal for Silicon Photonic Devices

Xuejun Xu, Taichi Chiba, Ryosuke Taniguchi, Takuya Maruizumi, and Yasuhiro Shiraki  »View Author Affiliations


http://dx.doi.org/10.1364/IONT.2012.ITh3B.4


View Full Text Article

Acrobat PDF (182 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Ge self-assembled quantum dots have weak light emission and absorption efficiencies in the telecommunication band. By combining them with photonic crystal, we demonstrate light emitting diodes with enhanced emission efficiency and photodetectors with enhanced responsivity.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5160) Optical devices : Photodetectors
(230.5298) Optical devices : Photonic crystals

Citation
X. Xu, T. Chiba, R. Taniguchi, T. Maruizumi, and Y. Shiraki, "Combination of Ge Self-Assembled Quantum Dots and Photonic Crystal for Silicon Photonic Devices," in International Photonics and Optoelectronics Meetings, OSA Technical Digest (online) (Optical Society of America, 2012), paper ITh3B.4.
http://www.opticsinfobase.org/abstract.cfm?URI=IONT-2012-ITh3B.4


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited