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Conferences > IONT > 2012 > ITh4A > ITh4A.06

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Y. Li, S. C. Chen, W. Tian, S. L. Li, H. Wang, J. Zhang, Z. H. Wu, Y. Y. Fang, J. N. Dai, and C. Q. Chen

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Abstract

Multi-growth approaches including pulsed atomic layer epitaxy and high temperature continuous growth were used to deposit AlN layers on sapphire substrates. The results show that the crystal quality can be significantly improved by the employment of the multi-growth approaches.

© 2012 Optical Society of America

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