Advantages of AlGaN-based UV-LEDs with AlxGa1−xN-AlyGa1−yN-AlxGa1−xN (y&lt;x) complex barriers

W.Y. Yan; W. Tian; Y. Yu; H. Xiong; Y.Y. Ding; Y. Tian; J. N. Dai; Y.Y. Fang; Z. H. Wu; C.Q. Chen

doi:10.1364/IONT.2012.ITh4A.15

International Photonics and Optoelectronics Meetings
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper ITh4A.15
•https://doi.org/10.1364/IONT.2012.ITh4A.15

Advantages of AlGaN-based UV-LEDs with Al_xGa_1−xN-Al_yGa_1−yN-Al_xGa_1−xN (y<x) complex barriers

W.Y. Yan, W. Tian, Y. Yu, H. Xiong, Y.Y. Ding, Y. Tian, J. N. Dai, Y.Y. Fang, Z. H. Wu, and C.Q. Chen

Information Optoelectronics, Nanofabrication and Testing 2012

Wuhan China
1–2 November 2012
ISBN: 978-1-55752-960-2

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IONT Poster Session I (ITh4A)

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W. Y. Yan, W. Tian, Y. Yu, H. Xiong, Y. Y. Ding, Y. Tian, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, "Advantages of AlGaN-based UV-LEDs with AlxGa1−xN-AlyGa1−yN-AlxGa1−xN (y<x) complex barriers," in International Photonics and Optoelectronics Meetings, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper ITh4A.15.

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Abstract

The advantages of AlGaN-based UV-LEDs with Al_xGa_1-xN-Al_yGa_1-yN-Al_xGa_1-xN (y<x) complex barriers in the MQWs are studied theorically. The energy band diagrams, distributions of carrier concentrations in the quantum wells, current-voltage characteristic curves, and output power-current performance curves are investigated numerically. The simulation results show that the light output power of AlGaN-based UV-LED with Al_xGa_1-xN-Al_yGa_1-yN-Al_xGa_1-xN (y<x) barriers in the MQWs, in comparison to the conventional UV-LED, is increased about 24.1% when the injection current is 150 mA. What is more, the efficiency drop of the proposed LED is much smaller when the injection current is 600 mA. The improvement of the device performance comes from the appropriate modification of the energy band diagrams which increases the injection efficiency of holes.

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