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Conference Paper
Information Optoelectronics, Nanofabrication and Testing
Wuhan China
November 1-2, 2012
ISBN: 978-1-55752-960-2
IONT Poster Session I (ITh4A)

Temperature dependence of refractive index change for InGaAs/InGaAsP quantum wells

Jun Cui, Qingyuan Miao, Ping-an He, Baolong Wang, and Welin Yu  »View Author Affiliations


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The effect of temperature on carrier induced refractive index change of InGaAs/InGaAsP quantum wells is studied, which shows that a reasonable adjustment of well width and carrier concentration can improve temperature dependence of index change.

© 2012 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

J. Cui, Q. Miao, P. He, B. Wang, and W. Yu, "Temperature dependence of refractive index change for InGaAs/InGaAsP quantum wells," in International Photonics and Optoelectronics Meetings, OSA Technical Digest (online) (Optical Society of America, 2012), paper ITh4A.24.

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