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Conference Paper
Integrated Photonics and Nanophotonics Research and Applications
Honolulu, Hawaii United States
July 12-17, 2009
ISBN: 978-1-55752-873-5
Silicon Photonics and Hybrid Material Integrated Devices (IMC)

The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators

Dylan F. Logan, Paul E. Jessop, Andrew P. Knights, and Russell Gwilliam


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The dependence of silicon’s absorption coefficient at 1.55 µm on the charge state of deep levels is modeled and measured experimentally. Improved designs for p-i-n rib waveguide modulators based on this effect are presented.

© 2009 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.3120) Integrated optics : Integrated optics devices
(130.4110) Integrated optics : Modulators

D. F. Logan, P. E. Jessop, A. P. Knights, and R. Gwilliam, "The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators," in Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), paper IMC2.

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