OSA's Digital Library

Optics InfoBase > Conference Papers > IPNRA > 2009 > IMC > Page IMC2 © 2009 OSA

Conference Paper
Integrated Photonics and Nanophotonics Research and Applications
Honolulu, Hawaii United States
July 12-17, 2009
ISBN: 978-1-55752-873-5
Silicon Photonics and Hybrid Material Integrated Devices (IMC)

The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators

Dylan F. Logan, Paul E. Jessop, Andrew P. Knights, and Russell Gwilliam

http://dx.doi.org/10.1364/IPNRA.2009.IMC2


View Full Text Article

Acrobat PDF (176 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

The dependence of silicon’s absorption coefficient at 1.55 µm on the charge state of deep levels is modeled and measured experimentally. Improved designs for p-i-n rib waveguide modulators based on this effect are presented.

© 2009 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.3120) Integrated optics : Integrated optics devices
(130.4110) Integrated optics : Modulators

Citation
D. F. Logan, P. E. Jessop, A. P. Knights, and R. Gwilliam, "The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators," in Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), paper IMC2.
http://www.opticsinfobase.org/abstract.cfm?URI=IPNRA-2009-IMC2


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited