The dependence of silicon’s absorption coefficient at 1.55 µm on the charge state of deep levels is modeled and measured experimentally. Improved designs for p-i-n rib waveguide modulators based on this effect are presented.
© 2009 OSA
D. F. Logan, P. E. Jessop, A. P. Knights, and R. Gwilliam, "The Use of Deep-Level Dopants in Silicon-on-Insulator Optical Waveguide Modulators," in Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), paper IMC2.
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