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Optics InfoBase > Conference Papers > IPR > 2002 > IThE > Page IThE4 © 2002 OSA

Conference Paper
Integrated Photonics Research
Vancouver Canada
July 17, 2002
ISBN: 1-55752-722-9
Integrated Detector Technology (IThE)

Resonant-cavity-enhanced GaAsSb avalanche photodiodes with separate absorption, charge and multiplication regions operating at 1300nm

Archie Holmes, Jr., X. Sun, S. Wang, X. G. Zheng, X. Li, and J. C. Campbell

http://dx.doi.org/10.1364/IPR.2002.IThE4


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No abstract available.

OCIS Codes
(040.5160) Detectors : Photodetectors
(160.1890) Materials : Detector materials

Citation
A. Holmes, Jr., X. Sun, S. Wang, X. G. Zheng, X. Li, and J. C. Campbell, "Resonant-cavity-enhanced GaAsSb avalanche photodiodes with separate absorption, charge and multiplication regions operating at 1300nm," in Integrated Photonics Research, A. Sawchuk, ed., Vol. 78 of OSA Trends in Optics and Photonics (Optical Society of America, 2002), paper IThE4.
http://www.opticsinfobase.org/abstract.cfm?URI=IPR-2002-IThE4


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