We show that free-carrier absorption puts an ultimate upper limit on the total Raman gain in silicon-on-insulator waveguides. The latter can be reached by an appropriate exponential tapering of the effective modal area.
© 2005 Optical Society of America
H. Renner, M. Krause, and E. Brinkmeyer, " Maximal Gain and Optimal Taper Design for Raman Amplifiers in Silicon-on-Insulator Waveguides," in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005), paper JWA3.
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