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Conference Paper
Integrated Photonics Research and Applications
Uncasville, Connecticut United States
April 24, 2006
Active and Compound Semiconductor Devices (ITuC)

High Side-Mode-Suppression-Ratio Sapphire-Bonded Photonic Crystal Laser under Continuous-Wave Operation

Min-Hsiung Shih, Wan Kuang, Mahmood Bagheri, Adam Mock, San-Jun Choi, John D. O'Brien, and P. Daniel Dapkus

http://dx.doi.org/10.1364/IPRA.2006.ITuC4


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Abstract

Sapphire-bonded photonic crystal lasers were fabricated and characterized under room temperature continuous wave operation, and a side-mode-suppression-ratio of 28 dB was observed. Lasing modes and spectra agree with theoretical prediction from three-dimensional finite-difference time-domain method.

© 2006 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.0250) Optoelectronics : Optoelectronics
(250.5300) Optoelectronics : Photonic integrated circuits

Citation
M. Shih, W. Kuang, M. Bagheri, A. Mock, S. Choi, J. D. O'Brien, and P. D. Dapkus, "High Side-Mode-Suppression-Ratio Sapphire-Bonded Photonic Crystal Laser under Continuous-Wave Operation," in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optical Society of America, 2006), paper ITuC4.
http://www.opticsinfobase.org/abstract.cfm?URI=IPRA-2006-ITuC4


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