We present evidence of enhanced n+-type doping of epitaxial Ge-on-Si for integrated light emitting devices. SIMS, Hall Effect, and photoluminescence measurements confirm dopant concentrations as high as 4 × 10<sup>19</sup> cm<sup>-3</sup> with efficient PL emission.
© 2011 OSA
J. Bessette, R. E. Camacho-Aguilera, Y. Cai, L. Kimerling, and J. Michel, "High n-type Doping for Ge Lasers," in Advanced Photonics, OSA Technical Digest (CD) (Optical Society of America, 2011), paper ITuC5.
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