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Conference Paper
Integrated Photonics Research, Silicon and Nanophotonics
Toronto Canada
June 12-15, 2011
ISBN: 978-1-55752-913-8
Photonic Integration I (ITuC)

High n-type Doping for Ge Lasers

Jonathan Bessette, Rodolfo E. Camacho-Aguilera, Yan Cai, Lionel Kimerling, and Jurgen Michel  »View Author Affiliations


http://dx.doi.org/10.1364/IPRSN.2011.ITuC5


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Abstract

We present evidence of enhanced n+-type doping of epitaxial Ge-on-Si for integrated light emitting devices. SIMS, Hall Effect, and photoluminescence measurements confirm dopant concentrations as high as 4 × 10<sup>19</sup> cm<sup>-3</sup> with efficient PL emission.

© 2011 OSA

OCIS Codes
(160.3380) Materials : Laser materials
(250.5960) Optoelectronics : Semiconductor lasers

Citation
J. Bessette, R. E. Camacho-Aguilera, Y. Cai, L. Kimerling, and J. Michel, "High n-type Doping for Ge Lasers," in Advanced Photonics, OSA Technical Digest (CD) (Optical Society of America, 2011), paper ITuC5.
http://www.opticsinfobase.org/abstract.cfm?URI=IPRSN-2011-ITuC5


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