We present monolithic integrated uni-traveling-carrier balanced photodiode flip-chip bonded on diamond. The devices with bandwidth of 15 GHz and 20 GHz demonstrated maximum output power of 27.4 dBm and 24.1 dBm, respectively.
© 2013 OSA
Q. Zhou, A. C. Cross, A. Beling, and J. Campbell, "High Power Balanced InGaAs/InP Photodetector Flip-chip Bonded on Diamond," in Advanced Photonics 2013, H. Chang, V. Tolstikhin, T. Krauss, and M. Watts, eds., OSA Technical Digest (online) (Optical Society of America, 2013), paper IW5A.5.
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