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High Power Balanced InGaAs/InP Photodetector Flip-chip Bonded on Diamond

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Abstract

We present monolithic integrated uni-traveling-carrier balanced photodiode flip-chip bonded on diamond. The devices with bandwidth of 15 GHz and 20 GHz demonstrated maximum output power of 27.4 dBm and 24.1 dBm, respectively.

© 2013 Optical Society of America

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