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Conference Paper
Integrated Photonics Research, Silicon and Nanophotonics
Rio Grande, Puerto Rico United States
July 14-17, 2013
ISBN: 978-1-55752-981-7
Integration and Sub-Systems (IW5A)

High Power Balanced InGaAs/InP Photodetector Flip-chip Bonded on Diamond

Qiugui Zhou, Allen C. Cross, Andreas Beling, and Joe Campbell  »View Author Affiliations


http://dx.doi.org/10.1364/IPRSN.2013.IW5A.5


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Abstract

We present monolithic integrated uni-traveling-carrier balanced photodiode flip-chip bonded on diamond. The devices with bandwidth of 15 GHz and 20 GHz demonstrated maximum output power of 27.4 dBm and 24.1 dBm, respectively.

© 2013 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5170) Optical devices : Photodiodes
(060.5625) Fiber optics and optical communications : Radio frequency photonics

Citation
Q. Zhou, A. C. Cross, A. Beling, and J. Campbell, "High Power Balanced InGaAs/InP Photodetector Flip-chip Bonded on Diamond," in Advanced Photonics 2013, H. Chang, V. Tolstikhin, T. Krauss, and M. Watts, eds., OSA Technical Digest (online) (Optical Society of America, 2013), paper IW5A.5.
http://www.opticsinfobase.org/abstract.cfm?URI=IPRSN-2013-IW5A.5


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