Achieving net laser cooling in semiconductors requires extremely low non-radiative recombination rates. We present photoluminescence data obtained with MOCVD GaAs/InGaP passivated heterostructures that show laser cooling of GaAs is feasible.
© 2004 Optical Society of America
B. Imangholi, M. P. Hasselbeck, M. Sheik-Bahae, R. I. Epstein, and S. Kurtz, "Laser cooling in semiconductors: Is it possible?," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2004), paper IMO6.
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