Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper IWA13
  • https://doi.org/10.1364/IQEC.2004.IWA13

Ultrafast Intersubband Relaxation in GaN/AlN multiple quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

We have observed intersubband transition dynamics in GaN/AlN. The relaxation dynamics consists of ultrafast and slower components. The origin of these dynamics is discussed.

© 2004 Optical Society of America

PDF Article
More Like This
Ultrafast Intersubband Relaxation and Carrier Cooling in GaN/AlN multiple quantum wells

J. Hamazaki, H. Kunugita, K. Ema, S. Matsui, Y. Ishii, T. Morita, A. Kikuchi, and K. Kishino
TuE11 International Conference on Ultrafast Phenomena (UP) 2004

Nonlinear susceptibility due to intersubband absorption saturation in GaN/AlN multiple quantum wells

J. Hamazaki, H. Kunugita, K. Ema, S. Matsui, Y. Ishii, T. Morita, A. Kikuchi, and K. Kishino
TuC2 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2004

Ultrashort (≤150 fs) carrier relaxation time of intersubband transition in AIGaN/GaN multiple quantum wells

Noria Iizuka, Kei Kaneko, Nobuo Suzuki, Takashi Asano, Susumu Noda, and Osamu Wada
CWP2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.