O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
© 2009 The Optical Society
(060.0060) Fiber optics and optical communications : Fiber optics and optical communications
(060.2330) Fiber optics and optical communications : Fiber optics communications
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
N. Yamamoto, H. Fujioka, K. Akahane, R. Katouf, T. Kawanishi, H. Takai, and H. Sotobayashi, "O-Band InAs/InGaAs Quantum Dot Laser Diode with Sandwiched Sub-Nano Separator (SSNS) Structures," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JThE12.
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