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Conference Paper
International Quantum Electronics Conference
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint IQEC Poster Session III (JThE)

Lifetime Broadening in GaInNAs Material

Nikolaos Vogiatzis and Judy M. Rorison

http://dx.doi.org/10.1364/CLEO.2009.JThE43


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Abstract

Using a many impurity Anderson model, we describe the interaction of localized N states with GaInAs conduction states. N dependent DOS and material gain reflect features from strong mixing with N pairs/clusters,suggesting its broadband tunability.

© 2009 The Optical Society

OCIS Codes
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

Citation
N. Vogiatzis and J. M. Rorison, "Lifetime Broadening in GaInNAs Material," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JThE43.
http://www.opticsinfobase.org/abstract.cfm?URI=IQEC-2009-JThE43


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