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Conference Paper
International Quantum Electronics Conference
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint IQEC Poster Session I (JTuD)

Bright Photoluminescence from Non-Tapered InN Nanowires Grown on Si by Molecular Beam Epitaxy

Yi-Lu Chang, Arya Fatehi, and Zetian Mi


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We have achieved superior quality non-tapered InN nanowires on Si(111) by molecular beam epitaxy, which are free of dislocations and exhibit bright photoluminescence at room-temperature and significantly reduced spectral broadening (linewidth~18.5 meV at 77K).

© 2009 The Optical Society

OCIS Codes
(160.0160) Materials : Materials
(160.4760) Materials : Optical properties
(160.4236) Materials : Nanomaterials

Y. Chang, A. Fatehi, and Z. Mi, "Bright Photoluminescence from Non-Tapered InN Nanowires Grown on Si by Molecular Beam Epitaxy," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JTuD106.

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