1.3μm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots

C. Y. Ngo; S. F. Yoon; W. K. Loke; Q. Cao; D. R. Lim; Vincent Wong; Y. K. Sim; S. J. Chua

doi:10.1364/CLEO.2009.JTuD28

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper JTuD28
•https://doi.org/10.1364/CLEO.2009.JTuD28

1.3μm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots

C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, Vincent Wong, Y. K. Sim, and S. J. Chua

International Quantum Electronics Conference 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Joint IQEC Poster Session I (JTuD)

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C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, V. Wong, Y. K. Sim, and S. J. Chua, "1.3μm Electroabsorption Modulator with InAs/InGaAs/GaAs Quantum Dots," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper JTuD28.

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Abstract

Electroabsorption properties of 1.3μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.

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