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Conference Paper
International Quantum Electronics Conference
Baltimore, Maryland United States
May 31, 2009 - June 5, 2009
ISBN: 978-1-55752-869-8
Joint IQEC Poster Session II (JWA)

Thin Film P-Ridge N-Stripe III-V Laser Broad Area Metal-Metal Bonded to Silicon

Sabarni Palit, Jeremy Kirch, Luke Mawst, Thomas Kuech, and Nan Jokerst


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A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm^2.

© 2009 The Optical Society

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(310.0310) Thin films : Thin films
(310.6845) Thin films : Thin film devices and applications
(250.5960) Optoelectronics : Semiconductor lasers

S. Palit, J. Kirch, L. Mawst, T. Kuech, and N. Jokerst, "Thin Film P-Ridge N-Stripe III-V Laser Broad Area Metal-Metal Bonded to Silicon," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JWA38.

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