Recording experiments performed on BD-R stacks with 4nm/4nm Cu/Si layers prove that jitter values as low as 4% are achievable. The writing mechanism is identified as a diffusion-driven process, probably that of Si into Cu.
© 2005 Optical Society of America
T. Kuiper, R. Vullers, and D. Pasquariello, " Low Jitter in BD-R with Optimized Cu/Si Bilayers," in International Symposium on Optical Memory and Optical Data Storage, OSA Technical Digest Series (Optical Society of America, 2005), paper ThB2.
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