Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer

Ming Lun Tseng; Bo Han Chen; Cheng Hung Chu; Cheng Hung Chu; Chia Min Chang; Hai-Pang Chiang; Din Ping Tsai; Din Ping Tsai; Din Ping Tsai

doi:10.1364/ISOM_ODS.2011.OTuD21

Nonlinear Optics
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper OTuD21
•https://doi.org/10.1364/ISOM_ODS.2011.OTuD21

Nanofabrication for multi states of Ge₂Sb₂Te₅ by femto-seond laser induced forward transfer

Ming Lun Tseng, Bo Han Chen, Cheng Hung Chu, Chia Min Chang, Hai-Pang Chiang, and Din Ping Tsai

Joint International Symposium on Optical Memory and Optical Data Storage 2011

Kauai, Hawaii United States
17–20 July 2011
ISBN: 978-1-55752-915-2

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ISOM/ODS Poster Session II (OTuD)

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M. L. Tseng, B. H. Chen, C. H. Chu, C. M. Chang, H. Chiang, and D. P. Tsai, "Nanofabrication for multi states of Ge2Sb2Te5 by femto-seond laser induced forward transfer," in Nonlinear Optics, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper OTuD21.

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Abstract

The nano patterns of phase-change material Ge₂Sb₂Te₅ are fabricated by the femto-second laser-induced forward transfer method. The size and the phase state of the Ge₂Sb₂Te₅ patterns can be effectively controlled by varying the applied laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the conductive-atomic force microscopy. This research has great potential in the area of the optical and the electrical data storage.

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