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Conference Paper
Nanophotonics
Uncasville, Connecticut United States
April 26, 2006
Nanomaterials (NThC)

Enhanced Electroluminescence of Si-rich SiOx Based MOS Diode by Interfacial Precipitated Si Nano-Pyramids

Chun-Jung Lin, Chi-Kuan Lin, and Gong-Ru Lin

http://dx.doi.org/10.1364/NANO.2006.NThC5


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Abstract

The interfacial Si nano-pyramid-enhanced electroluminescence of an ITO/SiOx/p-Si/Al MOS diode is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.

© 2006 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.2540) Materials : Fluorescent and luminescent materials
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

Citation
C. Lin, C. Lin, and G. Lin, "Enhanced Electroluminescence of Si-rich SiOx Based MOS Diode by Interfacial Precipitated Si Nano-Pyramids," in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optical Society of America, 2006), paper NThC5.
http://www.opticsinfobase.org/abstract.cfm?URI=NANO-2006-NThC5


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