1550nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90nm CMOS

Jonathan E. Roth; Samuel Palermo; Noah C. Helman; David P. Bour; David A. B. Miller; Mark Horowitz

Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference
OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
paper JThA38

1550nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90nm CMOS

Jonathan E. Roth, Samuel Palermo, Noah C. Helman, David P. Bour, David A. B. Miller, and Mark Horowitz

National Fiber Optic Engineers Conference 2007

Anaheim, California United States
25–29 March 2007
ISBN: 1-55752-830-6

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Joint Poster Session II (JThA)

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J. E. Roth, S. Palermo, N. C. Helman, D. P. Bour, D. A. B. Miller, and M. Horowitz, "1550nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90nm CMOS," in Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, OSA Technical Digest Series (CD) (Optica Publishing Group, 2007), paper JThA38.

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Abstract

A low-voltage 90nm CMOS optical interconnect transceiver operating at 1550nm is presented. This is the first system demonstrated using the recent Quasi-Waveguide Angled Facet Electroabsorption Modulator (QWAFEM), featuring simple electronic and optical packaging.

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