The pulses of 100-fs duration at 4800 nm were focused onto semiconductor materials of Si, Ge, and GaAs. Spectral broadening by a factor of >3 was observed with the input pulse energy of 3 micro-joule.
© 2009 OSA
S. Ashihara and Y. Kawahara, "Spectral Broadening of Mid-Infrared Femtosecond Pulses in Semiconductor Materials," in Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), paper JWA21.
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