OSA's Digital Library

Optics InfoBase > Conference Papers > NPIS > 2005 > JWA > Page JWA3 © 2005 OSA

Conference Paper
Nanophotonics for Information Systems
San Diego, California United States
April 13, 2005
ISBN: 1-55752-787-3
Joint IPRA/NPIS Oral Session: Frontiers in Nanophotonics (JWA)

Maximal Gain and Optimal Taper Design for Raman Amplifiers in Silicon-on-Insulator Waveguides

Hagen Renner, Michael Krause, and Ernst Brinkmeyer

View Full Text Article

Acrobat PDF (84 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


We show that free-carrier absorption puts an ultimate upper limit on the total Raman gain in silicon-on-insulator waveguides. The latter can be reached by an appropriate exponential tapering of the effective modal area.

© 2005 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.4310) Integrated optics : Nonlinear
(190.0190) Nonlinear optics : Nonlinear optics
(190.5650) Nonlinear optics : Raman effect

H. Renner, M. Krause, and E. Brinkmeyer, " Maximal Gain and Optimal Taper Design for Raman Amplifiers in Silicon-on-Insulator Waveguides," in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005), paper JWA3.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited