Travelling-wave GaInNAs-SOA was realized for the first time. The peak chip gain of 14dB and 3-dB gain bandwidth of 49 nm were obtained. The Gain dependence of the GaInNAs-SOA on temperature was much smaller than that of the conventional InP-based-SOA.
© 2003 Optical Society of America
J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito, and A. Ishida, "1.3 um travelling-wave GaInNAs semiconductor optical amplifier," in Optical Amplifiers and Their Applications, OSA Technical Digest Series (Optical Society of America, 2003), paper WB3.