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Conference Paper
Optical Amplifiers and Their Applications
San Francisco, California United States
June 27, 2004
ISBN: 1-55752-774-1
Novel SOA Devices and Structures (OMB)

1.3 µm GaInNAs semiconductor optical amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yasuhiro Iguchi, Takashi Yamada, Shigenori Takagishi, Masashi Ito, and Akira Ishida


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GaInNAs-SOA was investigated. The peak chip gain of 14dB and 3-dB gain bandwidth of 49 nm were realized. Small dependence of gain on temperature and good dynamic response to 40 Gbps optical pulses were obtained.

© 2004 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3280) Lasers and laser optics : Laser amplifiers
(250.0250) Optoelectronics : Optoelectronics
(250.5980) Optoelectronics : Semiconductor optical amplifiers

J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito, and A. Ishida, " 1.3 µm GaInNAs semiconductor optical amplifier," in Optical Amplifiers and Their Applications/Integrated Photonics Research, Technical Digest (CD) (Optical Society of America, 2004), paper OMB4.

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