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  • Optical Fiber Communications Conference
  • OSA Trends in Optics and Photonics (Optica Publishing Group, 2002),
  • paper WV7

High-performance InGaAs-on-silicon avalanche photodiodes

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Abstract

InP/InGaAs-based avalanche photodiodes (APDs) are commonly used in 2.5 Gb/s and 10 Gb/s fiber-optic lightwave receivers to achieve sensitivities of about –34 dBm1 and –24 dBm,2 respectively, at bit-error-rates of 10−12. Progress in commercial InP-based APD technology has produced gain-bandwidth (GB) products of about 80 GHz.3 A large increase in GB product combined with a reduction in excess noise will hardly be possible due to the inherent material limitations of InP: electrons and holes have nearly equal ionization coefficients.

© 2002 Optical Society of America

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