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Conference Paper
Optical Fiber Communication Conference
San Diego, California United States
March 22-26, 2009
ISBN: 978-1-55752-865-0
Si Photonic Devices (OMR)

80 GHz Bandwidth-Gain-Product Ge/Si Avalanche Photodetector by Selective Ge Growth

Xiaoxin Wang, Liang Chen, Wang Chen, Hailin Cui, Yan Hu, Pengfei Cai, Rong Yang, Ching-Yin Hong, Dong Pan, Kah-Wee Ang, Ming Bin Yu, Qing Fang, and Guo Qiang Lo

http://dx.doi.org/10.1364/OFC.2009.OMR3


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Abstract

We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain=8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.

© 2009 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(160.0160) Materials : Materials
(160.1890) Materials : Detector materials
(040.1345) Detectors : Avalanche photodiodes (APDs)

Citation
X. Wang, L. Chen, W. Chen, H. Cui, Y. Hu, P. Cai, R. Yang, C. Hong, D. Pan, K. Ang, M. B. Yu, Q. Fang, and G. Q. Lo, "80 GHz Bandwidth-Gain-Product Ge/Si Avalanche Photodetector by Selective Ge Growth," in Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMR3.
http://www.opticsinfobase.org/abstract.cfm?URI=OFC-2009-OMR3


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