We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain=8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.
© 2009 Optical Society of America
X. Wang, L. Chen, W. Chen, H. Cui, Y. Hu, P. Cai, R. Yang, C. Hong, D. Pan, K. Ang, M. B. Yu, Q. Fang, and G. Q. Lo, "80 GHz Bandwidth-Gain-Product Ge/Si Avalanche Photodetector by Selective Ge Growth," in Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, OSA Technical Digest (CD) (Optical Society of America, 2009), paper OMR3.
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