We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high sensitivity of -19.5 dBm for λ~1.55 μm.
© 2011 OSA
J. Joo, S. Kim, I. G. Kim, K. Jang, and G. Kim, "Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ~1.55 μm," in Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2011, OSA Technical Digest (CD) (Optical Society of America, 2011), paper OWZ7.
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