We report selective growth of high crystalline quality InGaAs photodetectors (PDs) with optimized InP/GaAs buffers on patterned SOI substrates by MOCVD. Both waveguide and normal-incidence PDs show low dark current and high-speed performance.
© 2014 OSA
Y. Geng, S. Feng, Y. Zhang, K. M. Lau, and A. W. Poon, "High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2014), paper M2G.2.
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