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High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate

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Abstract

We report selective growth of high crystalline quality InGaAs photodetectors (PDs) with optimized InP/GaAs buffers on patterned SOI substrates by MOCVD. Both waveguide and normal-incidence PDs show low dark current and high-speed performance.

© 2014 Optical Society of America

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