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BOX-less Waveguide Ge PD for Bulk-Si Based Silicon Photonic Platform

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Abstract

We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).

© 2014 Optical Society of America

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