Bit error free operation of a waveguide-integrated monolithic silicon avalanche photodiode is obtained for 10 Gb/s. The infrared photoresponse is enabled by the 1.8 µm absorption peak of the silicon divacancy defect, introduced via ion implantation.
© 2014 OSA
J. J. Ackert, A. S. Karar, J. C. Cartledge, P. E. Jessop, and A. P. Knights, "10 Gb/s bit error free performance of a monolithic silicon avalanche waveguide integrated photodetector," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2014), paper Th4C.3.
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