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50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform

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Abstract

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.

© 2015 Optical Society of America

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