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High Temperature Operation of an Integrated Erbium-Doped DBR Laser on an Ultra-Low-Loss Si3N4 Platform

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Abstract

We demonstrate record high temperature operation, 400 °C, of an integrated Al2O3:Er3+ DBR laser on an ultra-low-loss Si3N4 waveguide platform. Additionally, the device exhibits an uncompensated temperature dependent wavelength shift of 1.92 GHz/°C and maintains over 1.5 mW of output power throughout the entire temperature range.

© 2015 Optical Society of America

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