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Growth of highly c-axis oriented SBN thin films on Si (100) by the sol-gel method

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Abstract

Strontium barium niobate thin films on Si (001) substrates were obtained by sol-gel method. Highly c-axis oriented films were obtained by using the NbCl5 precursor instead of Nb(OC2H5)5-precursor, appropriate annealing temperature and introduction of buffer layer.

© 2004 Optical Society of America

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