The influence of hydrogen on the properties of Al and Ga doped ZnO films at low temperature

Meng-Chi Li; Chien-Cheng Kuo; Ssu-Hsiang Peng; Sheng-Hui Chen; Cheng-Chung Lee

doi:10.1364/OIC.2010.MC6

Optical Interference Coatings
OSA Technical Digest (Optica Publishing Group, 2010),
paper MC6
•https://doi.org/10.1364/OIC.2010.MC6

The influence of hydrogen on the properties of Al and Ga doped ZnO films at low temperature

Meng-Chi Li, Chien-Cheng Kuo, Ssu-Hsiang Peng, Sheng-Hui Chen, and Cheng-Chung Lee

Optical Interference Coatings 2010

Tucson, Arizona United States
6–11 June 2010
ISBN: 978-1-55752-891-9

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Coatings for Solar Applications (MC)

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M. Li, C. Kuo, S. Peng, S. Chen, and C. Lee, "The influence of hydrogen on the properties of Al and Ga doped ZnO films at low temperature," in Optical Interference Coatings, OSA Technical Digest (Optica Publishing Group, 2010), paper MC6.

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Abstract

Low resistivity and high transmittance of Al-doped ZnO and Ga-doped ZnO transparent conductive thin films have been achieved by a pulsed DC magnetron sputtering in various hydrogen ambient at low temperature.

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