We studied telluride compounds and transparent conductive oxides as high absorption materials for binary masks of extreme ultraviolet lithography at 13.5-nm wavelength. Their optical and structural properties are described.
© 2013 OSA
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(310.6860) Thin films : Thin films, optical properties
(340.7480) X-ray optics : X-rays, soft x-rays, extreme ultraviolet (EUV)
H. Y. Kang, S. Park, J. D. Lim, P. Peranantham, and C. K. Hwangbo, "Optical Properties of High Absorption Films for Binary Masks in Extreme Ultraviolet Lithography," in Optical Interference Coatings, M. Tilsch and D. Ristau, eds., OSA Technical Digest (online) (Optical Society of America, 2013), paper FC.1.
References are not available for this paper.