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Conference Paper
Optics for Solar Energy
Eindhoven Netherlands
November 11-14, 2012
ISBN: 978-1-55752-952-7
Joint Postdeadline Session (JT5A)

InP nanowire solar cell with high open circuit voltage and high fill factor

Yingchao Cui, Jia Wang, Sebastien Plissard, Michael Trainor, Thuy Vu, Ikaros Hauge, Jos Haverkort, and Erik Bakkers  »View Author Affiliations


http://dx.doi.org/10.1364/E2.2012.JT5A.1


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Abstract

We demonstrate an InP axial pn-junction nanowire solar cell array with high diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

© 2012 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(160.6000) Materials : Semiconductor materials
(160.4236) Materials : Nanomaterials

Citation
Y. Cui, J. Wang, S. Plissard, M. Trainor, T. Vu, I. Hauge, J. Haverkort, and E. Bakkers, "InP nanowire solar cell with high open circuit voltage and high fill factor," in Renewable Energy and the Environment Optics and Photonics Congress, OSA Technical Digest (online) (Optical Society of America, 2012), paper JT5A.1.
http://www.opticsinfobase.org/abstract.cfm?URI=OSE-2012-JT5A.1


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