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Conferences > OTST > 2005 > MA > MA4

Broadband THz Attenuation by Optically Excited Charge Carriers in Silicon

C. Karaalioglu, I. Chen, M. Brucherseifer, R. Martini, and A. Meshal

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Abstract

The THz transmittance of a silicon sample could be optically controlled, allowing broadband THz attenuation to less than 1% measured in a standard THz time domain spectroscopy setup.

© 2005 Optical Society of America

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