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Optics InfoBase > Conference Papers > OTST > 2005 > MC > Page MC6 © 2005 OSA

Conference Paper
Optical Terahertz Science and Technology
Orlando, Florida United States
March 14, 2005
ISBN: 1-55752-786-5
Sources I (MC)

MBE Grown InN: A Novel THz Emitter

Ricardo Ascazubi, Ingrid Wilke, Hai Lu, and William J. Schaff

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Abstract

Strong optically excited terahertz emission has been observed from InN thin films. The emission mechanism has been determined to be photocarrier acceleration. This observation implies that InN has a bandgap smaller than 1.5 eV.

© 2005 Optical Society of America

OCIS Codes
(320.0320) Ultrafast optics : Ultrafast optics
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
R. Ascazubi, I. Wilke, H. Lu, and W. J. Schaff, " MBE Grown InN: A Novel THz Emitter," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optical Society of America, 2005), paper MC6.
http://www.opticsinfobase.org/abstract.cfm?URI=OTST-2005-MC6


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