OSA's Digital Library

Optics InfoBase > Conference Papers > OTST > 2005 > MC > Page MC6 © 2005 OSA

Conference Paper
Optical Terahertz Science and Technology
Orlando, Florida United States
March 14, 2005
ISBN: 1-55752-786-5
Sources I (MC)

MBE Grown InN: A Novel THz Emitter

Ricardo Ascazubi, Ingrid Wilke, Hai Lu, and William J. Schaff

View Full Text Article

Acrobat PDF (92 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Strong optically excited terahertz emission has been observed from InN thin films. The emission mechanism has been determined to be photocarrier acceleration. This observation implies that InN has a bandgap smaller than 1.5 eV.

© 2005 Optical Society of America

OCIS Codes
(320.0320) Ultrafast optics : Ultrafast optics
(320.7080) Ultrafast optics : Ultrafast devices
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

R. Ascazubi, I. Wilke, H. Lu, and W. J. Schaff, " MBE Grown InN: A Novel THz Emitter," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optical Society of America, 2005), paper MC6.

Sort:  Journal  |  Reset


References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited