Strong optically excited terahertz emission has been observed from InN thin films. The emission mechanism has been determined to be photocarrier acceleration. This observation implies that InN has a bandgap smaller than 1.5 eV.
© 2005 Optical Society of America
R. Ascazubi, I. Wilke, H. Lu, and W. J. Schaff, " MBE Grown InN: A Novel THz Emitter," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optical Society of America, 2005), paper MC6.
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