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Conference Paper
Optical Terahertz Science and Technology
Orlando, Florida United States
March 14, 2005
ISBN: 1-55752-786-5
Imaging and Microscopy (TuC)

Inspection of Semiconductor Devices without Bias Voltage Using a Laser-THz Emission Microscope

Masatsugu Yamashita, Kodo Kawase, Chiko Otani, Kiyoshi Nikawa, and Masayoshi Tonouchi

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Abstract

We measured normal and damaged MOSFETs without bias votage using LTEM. The polarity reversal of the THz emission waveform between normal MOSFET and damaged one indicates the possibillity of the LSI inspection without bias voltage.

© 2005 Optical Society of America

OCIS Codes
(110.0110) Imaging systems : Imaging systems
(110.3080) Imaging systems : Infrared imaging
(180.0180) Microscopy : Microscopy
(180.5810) Microscopy : Scanning microscopy

Citation
M. Yamashita, K. Kawase, C. Otani, K. Nikawa, and M. Tonouchi, " Inspection of Semiconductor Devices without Bias Voltage Using a Laser-THz Emission Microscope," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optical Society of America, 2005), paper TuC4.
http://www.opticsinfobase.org/abstract.cfm?URI=OTST-2005-TuC4


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