We measured normal and damaged MOSFETs without bias votage using LTEM. The polarity reversal of the THz emission waveform between normal MOSFET and damaged one indicates the possibillity of the LSI inspection without bias voltage.
© 2005 Optical Society of America
M. Yamashita, K. Kawase, C. Otani, K. Nikawa, and M. Tonouchi, " Inspection of Semiconductor Devices without Bias Voltage Using a Laser-THz Emission Microscope," in Optical Terahertz Science and Technology, Technical Digest (CD) (Optical Society of America, 2005), paper TuC4.
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