We have fabricated photorefractive InGaAs/GaAs multiple quantum wells operating at a wavelength of 1064 nm and have characterized its photorefractive properties in the Franz-Keldysh geometry. A maximum gain coefficient of 200 cm-1 and a maximum four-wave mixing diffraction efficiency of 0.07% are obtained at an applied field of 15 kV/cm. Adaptive vibration measurement in a two- wave mixing configuration has also been demonstrated. The noise equivalent surface displacement of our measurement system is estimated at about 1.5xl0-6 nm(W/Hz)1/2.
© 2001 Optical Society of America
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(190.5530) Nonlinear optics : Pulse propagation and temporal solitons
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
S. Iwamoto, S. Taketomi, M. Nishioka, T. Someya, Y. Arakawa, T. Shimura, and K. Kuroda, "Photorefractive multiple quantum well device at 1064 nm and its application to adaptive vibration measurement," in Photorefractive Effects, Materials, and Devices, G. Salamo and A. Siahmakoun, eds., Vol. 62 of OSA Trends in Optics and Photonics (Optical Society of America, 2001), paper 417.
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