The basis for the HVCSEL structures that are considered consist of a 1 |Ltm GaAs active layer sandwiched between two Bragg stacks. The linear, nonlinear, and holographic properties of the HVCSEL were calculated using the transfer matrix approach. For holographic films to operate as wide-area devices, the readable bandwidth of the hologram must be as large as possible. This reduces the dependence on laser tuning requirements and helps in overcoming spatially varying shifts in the cavity resonance position caused by thickness variations in the thin film. Designing the structure with low mirror reflectances (sqrt(RiR2) = 95%) gives a cavity resonance bandwidth of nearly 2 nm which is sufficiently broad to allow hologram readout over an area of several square millimeters. The material properties were fixed and the optical properties were then calculated for several structures with different Bragg stack stoichiometry and the best design was obtained.
© 2001 Optical Society of America
(090.2880) Holography : Holographic interferometry
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers
S. Balasubramanian, M. R. Melloch, and D. D. Nolte, "Designing a Broad-Area Optically-Pumped Holographic Vertical Cavity Surface Emitting Laser (HVCSEL)," in Photorefractive Effects, Materials, and Devices, G. Salamo and A. Siahmakoun, eds., Vol. 62 of OSA Trends in Optics and Photonics (Optical Society of America, 2001), paper 434.