We measured the electro-optical properties of Sn2P2S6 single crystals for electric fields parallel to the crystallographic x-axis. A direct interferometric technique is used and unclamped as well as clamped values are determined. The measured coefficients are large, with a maximum of 174 ± 10pm/V for the unclamped coefficient rT 111 at λ = 633nm. The corresponding reduced half-wave voltage is V π = 124 V.
© 2003 Optical Society of America
D. Haertle, G. Caimi, A. Haldi, G. Montemezzani, P. Güunter, A. A. Grabar, I. M. Stoika, and Y. M. Vysochanskii, "Electro-optical properties of photorefractive Sn2P2S6," in Photorefractive Effects, Materials, and Devices, P. Delaye, C. Denz, L. Mager, and G. Montemezzani, eds., Vol. 87 of OSA Trends in Optics and Photonics (Optical Society of America, 2003), paper 73.