The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling effect.
© 2005 Optical Society of America
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(190.5330) Nonlinear optics : Photorefractive optics
(190.7070) Nonlinear optics : Two-wave mixing
T. Innami, S. Kitazaki, R. Fujimura, M. Nomura, T. Shimura, and K. Kuroda, "Two beam coupling in semi-insulating GaN using electroabsorption effect," in Photorefractive Effects, Materials, and Devices, G. Zhang, D. Kip, D. Nolte, and J. Xu, eds., Vol. 99 of OSA Trends in Optics and Photonics (Optical Society of America, 2005), paper 244.
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