Abstract: For future 65 nm and smaller nodes, thermal anneal processes in the ms and µs range are required. Based on laboratory tests using the line scan method, an R&D system has been developed.
© 2006 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3390) Lasers and laser optics : Laser materials processing
(160.0160) Materials : Materials
(160.6000) Materials : Semiconductor materials
P. M. Oesterlin, "Methods and Tools for Semiconductor Annealing and Silicon Thin Film Crystallization Using Solid-State Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2006), paper PTuB2.
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