OSA's Digital Library

Optics InfoBase > Conference Papers > QELS > 2003 > QWA > Page QWA16 © 2003 OSA

Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
June 1, 2003
ISBN: 1-55752-733-4
QELS Poster Session II (QWA)

Effects of strain on carrier recombination in GaN quantum dots

Arup Neogi, Henry O. Everitt, Hadis Morkoç, Takamasa Kuroda, and Atsushi Tackeuchi

View Full Text Article

Acrobat PDF (747 KB) Note that full-text PDFs from conferences typically contain 1-3 pages of content, some or all of which might be an abstract, summary, or miscellaneous items.





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

No abstract available.

OCIS Codes
(250.5230) Optoelectronics : Photoluminescence
(300.6500) Spectroscopy : Spectroscopy, time-resolved

Citation
A. Neogi, H. O. Everitt, H. Morkoç, T. Kuroda, and A. Tackeuchi, "Effects of strain on carrier recombination in GaN quantum dots," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optical Society of America, 2003), paper QWA16.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2003-QWA16


Sort:  Journal  |  Reset

References

References are not available for this paper.

OSA is a member of CrossRef.

CrossCheck Deposited