Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > QELS > 2003 > QWA > QWA16
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper QWA16

Effects of Strain on Carrier Recombination in GaN Quantum Dots

A. Neogi, H. O. Everitt, H. Morkoç, T. Kuroda, and A. Tackeuchi

Not Accessible

Your library or personal account may give you access

Abstract

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

© 2003 Optical Society of America

PDF Article
More Like This
Modification of spontaneous emission rate in Strained GaN Quantum Dots by Resonant Surface Plasmon Interaction

A. Neogi and H. Morkoç
CTuF1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003

Near Field Optical Spectroscopy of GaN/AlN Quantum Dots

A. Neogi, H. Morkoc, A. Tackeuchi, T. Kuroda, M. Ohtsu, and T. Kawazoe
IThM2 International Quantum Electronics Conference (IQEC) 2004

Quantum dot materials for solar cell applications: effects of strain-reducing and strain-compensated barriers on dot structural and optical properties

A. Pancholi, Y.C. Zhang, J. Boyle, V.G. Stoleru, M.C. Hanna, A.G. Norman, S. Bremner, and C. Honsberg
STuE1 Solar Energy: New Materials and Nanostructured Devices for High Efficiency (Solar) 2008

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use