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Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Poster Session I (JTuC)

Femtosecond Laser Ablation of Silicon (100) with Thermal Oxide Thin Films of Varying Thickness

Joel P. McDonald, Katherine E. Ray, Vanita R. Mistry, Gerard Mourou, and Steven M. Yalisove

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Abstract

Femtosecond laser ablation of Silicon (100) with thermal oxide thin films was studied in order to further understand the ablative properties of thin films and to evaluate their influence on the ablation of the substrate.

© 2005 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.2750) Materials : Glass and other amorphous materials
(310.0310) Thin films : Thin films
(310.3840) Thin films : Materials and process characterization

Citation
J. P. McDonald, K. E. Ray, V. R. Mistry, G. Mourou, and S. M. Yalisove, "Femtosecond Laser Ablation of Silicon (100) with Thermal Oxide Thin Films of Varying Thickness," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JTuC44.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2005-JTuC44


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