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Conference Paper
Quantum Electronics and Laser Science Conference
Baltimore, Maryland United States
May 22, 2005
ISBN: 1-55752-770-9
Poster Session I (JTuC)

InGaN/GaN MQW Laser Diodes with 4th Order FIB-etched Gratings

Dorleta Cortaberria Sanz, Judy M. Rorison, and Siyuan Yu

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Abstract

Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4th order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.

© 2005 Optical Society of America

OCIS Codes
(050.0050) Diffraction and gratings : Diffraction and gratings
(050.2770) Diffraction and gratings : Gratings
(250.0250) Optoelectronics : Optoelectronics
(250.7270) Optoelectronics : Vertical emitting lasers

Citation
D. Cortaberria Sanz, J. M. Rorison, and S. Yu, "InGaN/GaN MQW Laser Diodes with 4th Order FIB-etched Gratings," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optical Society of America, 2005), paper JTuC82.
http://www.opticsinfobase.org/abstract.cfm?URI=QELS-2005-JTuC82


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